vishay general semiconductor bym11-50 thru bym11-1000, rgl41a thru rgl41m document number 88547 26-jun-06 www.vishay.com 1 surface mount glass p assivated junction fast switching rectifier features ? superectifier struct ure for high reliability condition ? patented glass-plastic encapsulation technique ? ideal for automated placement ? fast switching for high efficiency ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-std-020c, lf max peak of 250 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in fast switching re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-213ab, molded epoxy over glass body epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating patented* ? do-213ab *glass-plastic encapsulation is covered by patent no. 3,996,602, brazed-lead assembly to patent no. 3,930,306 major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm 30 a t rr 150 ns, 250 ns, 500 ns v f 1.3 v t j max. 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bym 11-50 bym 11-100 bym 11-200 bym 11-400 bym 11-600 bym 11-800 bym 11-1000 unit fast switching time device: 1st band is red rgl41a rgl41b rgl41d rgl41g rgl41j rgl41k rgl41m polarity color bands (2nd band) gray red orange yellow green blue violet maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t t = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a maximum full load re verse current, full cycle average at t a = 55 c i r(av) 50 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88547 26-jun-06 vishay general semiconductor bym11-50 thru bym11-1000, rgl41a thru rgl41m note: (1) thermal resistance from junction to ambient, 0. 24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal (2) thermal resistance from junction to terminal, 0. 24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol bym 11-50 bym 11-100 bym 11-200 bym 11-400 bym 11-600 bym 11-800 bym 11-1000 unit maximum instantaneous forward voltage at 1.0 a v f 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 50 a maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 500 ns typical junction capacitance at 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bym 11-50 bym 11-100 bym 11-200 bym 11-400 bym 11-600 bym 11-800 bym 11-1000 unit maximum thermal resistance r ja r jt 75 (1) 30 (2) c/w ordering information preferred p/n unit weight (g) referred package code base quantity delivery mode rgl41j-e3/96 0.114 96 1500 7" di ameter plastic tape & reel rgl41j-e3/97 0.114 97 5000 13" di ameter plastic tape & reel bym11-600-e3/96 0.114 96 1500 7" di ameter plastic tape & reel bym11-600-e3/97 0.114 97 5000 13" diameter plastic tape & reel figure 1. forward current derating curve a v erage for w ard rectified c u rrent (a) 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1.0 1.25 resisti v eor ind u cti v e load terminal temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 10 15 20 25 30 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e
document number 88547 26-jun-06 www.vishay.com 3 bym11-50 thru bym11-1000, rgl41a thru rgl41m vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 25 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance 1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 mo u nted on 0.20 x 0.27" (5 x 7 mm) copper pad areas transient thermal impedance (c/ w ) t - p u lse d u ration (s) solderable e n ds 1st ba n d 0.022 (0.56) 0.01 8 (0.46) 0.205 (5.2) 0.1 8 5(4.7) d1 = 0.105 0.095 (2.67) (2.41) d2 = d1 + 0 - 0.00 8 (0.20) d2 0.022 (0.56) 0.01 8 (0.46) do-213ab 0.13 8 max (3.5) max 0.049 mi n (1.25) mi n 0.11 8 mi n (3.0) mi n 0.23 8 (6.0) ref mountin g pad layout 1st b and denotes type and positi v e end (cathode)
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